STMicroelectronics STF2N80K5
$ 0.651
Production
Inventory History
3 month trend: -4.23%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
Download STMicroelectronics STF2N80K5 symbol, footprint, and 3D STEP models from our trusted partners.
| source | eCAD | mCAD | FILES |
|---|---|---|---|
 Component Search Engine | SymbolFootprint | 3D | Download |
 Ultra Librarian | SymbolFootprint | Download |
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.
Related Parts
STMicroelectronicsSTP3NK60ZFP
N-CHANNEL 600V - 3.3 Ohm - 2.4A TO-220FP Zener-Protected SuperMESH™ PowerMOSFET
Descriptions
Descriptions of STMicroelectronics STF2N80K5 provided by its distributors.
N-Channel 800 V 2 A 4.5 Ohm SuperMESH 5 Power Mosfet - TO-220FP
STF2N80K5 N-CHANNEL MOSFET TRANSISTOR, 2 A, 800 V, 3-PIN TO-220FP
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB
Trans MOSFET N-CH 800V 2A 3-Pin(3+Tab) TO-220FP Tube
STMicroelectronics NMOS MDmesh K5, SuperMESH5, Vds=800 V, 2 A, TO-220FP, , 3
N-channel 800 V, 3.5 OHM typ., 2 A Mdmesh M5 Power MOSFET Power Field-Effect Transistor, 2A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N-Ch, 800V, 2A, To-220Fp; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:2A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STF2N80K5
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -4.23%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight329.988449 mg
Technical
Continuous Drain Current (ID)2 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance4.5 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)30 V
Input Capacitance95 pF
Max Operating Temperature150 °C
Max Power Dissipation20 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation20 W
Rds On Max4.5 Ω
Turn-Off Delay Time19 ns
Turn-On Delay Time8 ns
Dimensions
Height16.4 mm
Length10.4 mm
Width4.6 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant