STMicroelectronics STF23NM50N
$ 2.256
Production
Price and Stock
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Inventory History
3 month trend: -100%
CAD Models
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Alternate Parts
0 parts available
CAD Models
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Descriptions
Descriptions of STMicroelectronics STF23NM50N provided by its distributors.
STF23NM50N N-channel MOSFET Transistor, 17 A, 500 V, 3-Pin TO-220FP
Single N-Channel 500 V 0.19 Ohm 45 nC 30 W Silicon Flange Mount Mosfet TO-220FP
N-channel 500 V, 0.162 Ohm, 17 A, TO-220FP MDmesh(TM) II Power MOSFET
Trans MOSFET N-CH 500V 17A 3-Pin(3+Tab) TO-220FP Tube
Power Field-Effect Transistor, 17A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
30W(Tc) 25V 4V@ 250¦ÌA 45nC@ 10 V 1individualNChannel 500V 190m¦¸@ 8.5A,10V 17A 1.33nF@50V TO-220FP Through hole mounting
MOSFET, N CH, 550V, 17A, TO 220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.162ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:30W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)17 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time29 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.33 nF
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation30 W
Rds On Max190 mΩ
Resistance190 MΩ
Rise Time19 ns
Threshold Voltage3 V
Turn-Off Delay Time71 ns
Turn-On Delay Time6.6 ns
Dimensions
Height16.4 mm
Length10.4 mm
Width4.6 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant