STMicroelectronics STD9NM60N
$ 0.873
Production
Inventory History
3 month trend: -100%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STD9NM60N.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-10-19
Lifecycle StatusProduction (Last Updated: 1 month ago)
Related Parts
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STMicroelectronicsSTD8NM60ND
Mosfet Transistor, N Channel, 7 A, 600 V, 0.59 Ohm, 10 V, 4 V Rohs Compliant: Yes
VishaySIHD7N60E-GE3
VISHAY SIHD7N60E-GE3 Power MOSFET, N Channel, 7 A, 650 V, 0.5 ohm, 10 V, 2 V
Descriptions
Descriptions of STMicroelectronics STD9NM60N provided by its distributors.
N-channel 600 V, 0.63 Ohm, 6.5 A DPAK MDmesh(TM) II Power MOSFET
Power Field-Effect Transistor, 6.5A I(D), 600V, 0.745ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
70W(Tc) 25V 4V@ 250µA 17.4nC@ 10 V 1individualNChannel 600V 745mΩ@ 3.25A,10V 6.5A 452pF@50V DPAK，TO-252-3 SMD mount 2.63mm(height)
MOSFET, N CH, 600V, 6.5A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.63ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)6.5 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance745 mΩ
Drain to Source Voltage (Vdss)600 V
Fall Time26.7 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance452 pF
Max Operating Temperature150 °C
Max Power Dissipation100 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation70 W
Rds On Max745 mΩ
Resistance745 mΩ
Rise Time23 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time52.5 ns
Turn-On Delay Time28 ns
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STD9NM60N.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant