STMicroelectronics STD3NK50Z-1
$ 0.246
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | STD3NK50Z-1 | 3,000 | 75 | 6d | ||||||||
| Farnell | STD3NK50Z-1 | 0 | 1 | 11h | ||||||||
| Microchip USA | STD3NK50Z-1 | 2,974 | 300 | Tube | 4h | |||||||
| Win Source | WS-STD3NK50Z-1 | 5,600 | 175 | 12h | ||||||||
| Worldway Electronics | STD3NK50Z-1 | 11,028 | 7 | Tube | 11h |
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STD3NK50Z-1.
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-07-12
Lifecycle StatusProduction (Last Updated: 4 months ago)
Descriptions
Descriptions of STMicroelectronics STD3NK50Z-1 provided by its distributors.
STMICROELECTRONICS STD3NK50Z-1 MOSFET Transistor, N Channel, 1.15 A, 500 V, 2.8 ohm, 10 V, 3.75 V
N-channel 500 V, 2.8 Ohm typ., 2.3 A SuperMESH Power MOSFET in an IPAK package
Ciiva
Power MOSFET, N Channel, 500 V, 1.15 A, 2.8 ohm, TO-251AA, Through Hole
Power Field-Effect Transistor, 2.3A I(D), 500V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
MOSFET, N CH, 500V, 2.3A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.15A; Drain Source Voltage Vds:500V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:45W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:2.3A; Package / Case:IPAK; Power Dissipation Pd:45W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Technical Specifications
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)2.3 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance3.3 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance280 pF
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Nominal Vgs3.75 V
Number of Elements1
Power Dissipation45 W
Rds On Max3.3 Ω
Rise Time13 ns
Threshold Voltage3.75 V
Turn-Off Delay Time24 ns
Turn-On Delay Time8 ns
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STD3NK50Z-1.
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant