STMicroelectronics STB80NF55L-06T4
$ 2.43
Obsolete
Price and Stock
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SKU
Min
Pkg
Bulk Pricing
Inventory History
3 month trend: -14.29%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 3 weeks ago)
LTB Date2024-07-27
LTD Date2025-01-27
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Descriptions
Descriptions of STMicroelectronics STB80NF55L-06T4 provided by its distributors.
STB80NF55L-06T4 N-CHANNEL MOSFET TRANSISTOR, 80 A, 55 V, 3-PIN D2PAK
N-CHANNEL 55V 0.005 Ohm 80A D2PAK STripFET™ MOSFET
N-Channel 55 V 6.5 mOhm SMT StripFET II Power Mosfet - D2PAK
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R
MOSFET, N CH, 55V, 80A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.005ohm; Rds; Available until stocks are exhausted Alternative available
Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -14.29%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time80 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance4.85 nF
Max Operating Temperature175 °C
Max Power Dissipation210 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation300 W
Rds On Max6.5 mΩ
Rise Time180 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time135 ns
Turn-On Delay Time32 ns
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant