STMicroelectronics STB6NK60Z-1
$ 0.369
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | STB6NK60Z-1 | 1,000 | 30 | Tube | ||||||||
| Arrow Electronics | STB6NK60Z-1 | 963 | 1 | |||||||||
| Verical | STB6NK60Z-1 | 963 | 17 | |||||||||
| Avnet | STB6NK60Z-1 | 0 | 2K | 3d | ||||||||
| Microchip USA | STB6NK60Z-1 | 1,318 | 3500 | Tube | 4d |
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB6NK60Z-1.
CAD Models
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|---|---|---|---|
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
Related Parts
onsemiFQI6N60CTU
Power Field-Effect Transistor, 5.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
STMicroelectronicsSTFI6N62K3
N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in I2PAKFP package
Descriptions
Descriptions of STMicroelectronics STB6NK60Z-1 provided by its distributors.
N-channel 600 V - 1 Ohm - 6 A - I2PAK Zener-Protected SuperMESH(TM) Power MOSFET
MOSFET N-CH 600V 6A I2PAK / Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) I2PAK Tube
110W(Tc) 30V 4.5V@ 100¦ÌA 46nC@ 10 V 1N 600V 1.2¦¸@ 3A,10V 6A 905pF@25V I2PAK 10mm*4.4mm*8.95mm
Hv Mosfet Planar |Stmicroelectronics STB6NK60Z-1
Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Power MOSFETs, 600V, 6A, I2PAK, Tube
STMicroelectronics SCT
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)6 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance905 pF
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation110 W
Rds On Max1.2 Ω
Resistance1.2 Ω
Rise Time14 ns
Schedule B8541290080
Turn-Off Delay Time47 ns
Turn-On Delay Time14 ns
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB6NK60Z-1.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant