onsemi FQI5N60CTU
$ 0.531
Obsolete
Price and Stock
Authorized Distributors
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SKU
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Inventory History
3 month trend: +0.00%
CAD Models
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Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-10-30
Lifecycle StatusObsolete (Last Updated: 4 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
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N-channel 620 V, 1.7 Ohm typ., 3.8 A, SuperMESH3(TM) Power MOSFET in I2PAKFP package
Descriptions
Descriptions of onsemi FQI5N60CTU provided by its distributors.
N-Channel Power MOSFET, QFET®, 600 V, 4.5 A, 2.5 Ω, I2PAK
Power Field-Effect Transistor, 4.5A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
3.13W(Ta)，100W(Tc) 4V@ 250µA 19nC@ 10V 1individualNChannel 600V 2.5Ω@ 2.25A,10V 670pF@25V I2PAK，TO-262 Through hole mounting
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Terminals3
Weight2.084 g
Technical
Continuous Drain Current (ID)4.5 A
Current Rating5 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance2.5 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time46 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance670 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation100 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation100 W
Rds On Max2.5 Ω
Rise Time42 ns
Turn-Off Delay Time38 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)600 V
Dimensions
Height15.01 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements