onsemi FQI8N60CTU
$ 0.755
Obsolete
Price and Stock
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Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-10-30
Lifecycle StatusObsolete (Last Updated: 1 day ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 day ago)
Related Parts
STMicroelectronicsSTB6NK60Z-1
N-channel 600 V - 1 Ohm - 6 A - I2PAK Zener-Protected SuperMESH(TM) Power MOSFET
Descriptions
Descriptions of onsemi FQI8N60CTU provided by its distributors.
N-Channel Power MOSFET, QFET®, 600 V, 7.5 A, 1.2 Ω, I2PAK
3.13W(Ta)，147W(Tc) 4V@ 250µA 36nC@ 10V 1individualNChannel 600V 1.2Ω@ 3.75A,10V 1.255pF@25V I2PAK，TO-262 Through hole mounting
Mosfet, N-Ch, 600V, 7.5A, I2Pak; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:7.5A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Onsemi FQI8N60CTU
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Terminals3
Weight2.084 g
Technical
Continuous Drain Current (ID)7.5 A
Current Rating8 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time64.5 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.255 nF
Max Operating Temperature150 °C
Max Power Dissipation147 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.13 W
Rds On Max1.2 Ω
Rise Time60.5 ns
Turn-Off Delay Time81 ns
Turn-On Delay Time16.5 ns
Voltage Rating (DC)600 V
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements