STMicroelectronics STB4NK60Z-1
$ 0.277
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | STB4NK60Z-1 | 5,000 | 1K | |||||||||
| TME | STB4NK60Z-1 | 0 | 1K | 22h | ||||||||
| Avnet | STB4NK60Z-1 | 0 | 2K | 9h | ||||||||
| Microchip USA | STB4NK60Z-1 | 1,204 | 3500 | Tray | 4d | |||||||
| Win Source | WS-STB4NK60Z-1 | 1,300 | 55 | 7h |
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB4NK60Z-1.
CAD Models
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| source | eCAD | mCAD | FILES |
|---|---|---|---|
 Component Search Engine | SymbolFootprint | 3D | Download |
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
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N-channel 620 V, 1.7 Ohm typ., 3.8 A, SuperMESH3(TM) Power MOSFET in I2PAKFP package
Descriptions
Descriptions of STMicroelectronics STB4NK60Z-1 provided by its distributors.
N-channel 600 V, 1.76 Ohm, 4 A SuperMESH(TM) Power MOSFET in I2PAK
70W(Tc) 30V 4.5V@ 50¦ÌA 26nC@ 10 V 1N 600V 2¦¸@ 2A,10V 4A 510pF@25V I2PAK 10mm*4.4mm*8.95mm
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) I2PAK T/R
STB4NK60 Series 600 V 4 A 70 W Through Hole N-Ch Power MOSFET - I2PAK
4 A 600 V 2 ohm N-CHANNEL Si POWER MOSFET TO-262AA
Hv Mosfet Planar |Stmicroelectronics STB4NK60Z-1
MOSFET N-Ch, 600V-1.76ohms Zener SuperMESH 4A
600 V, 4 A, 1.76 OHM N-CHANNEL SUPERMESH POWER MOSFET IN I2PAK Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Power MOSFETs, 600V, 4A, I2PAK, Tube
STMicroelectronics SCT
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)4 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance2 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time16.5 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance510 pF
Max Operating Temperature150 °C
Max Power Dissipation70 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation70 W
Rds On Max2 Ω
Rise Time9.5 ns
Turn-Off Delay Time29 ns
Turn-On Delay Time12 ns
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB4NK60Z-1.
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant