STMicroelectronics STB3N62K3
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | STB3N62K3 | 0 | 1 | 1d | ||||||||
| Microchip USA | STB3N62K3 | 2,257 | 3K | 1d | ||||||||
| Component Stockers USA | STB3N62K3 | 9,235 | >1wk | |||||||||
| Win Source | WS-STB3N62K3 | 7,200 | 45 | 1h | ||||||||
| Worldway Electronics | STB3N62K3 | 21,890 | 7 | Tape & Reel | 23h |
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB3N62K3.
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|---|---|---|---|
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-07-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-01-29
LTD Date2014-07-29
Related Parts
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STB3NK60ZT4 N-channel MOSFET Transistor, 2.4 A, 600 V, 3-Pin D2PAK
STMicroelectronicsSTB4NK60ZT4
N-channel 600 V, 1.76 Ohm, 4 A SuperMESH(TM) Power MOSFET in D2PAK
Descriptions
Descriptions of STMicroelectronics STB3N62K3 provided by its distributors.
Mosfet Transistor, N Channel, 2.7 A, 620 V, 2.2 Ohm, 10 V, 3.75 V Rohs Compliant: Yes
N-channel 620 V, 2.2 Ohm typ., 2.7 A SuperMESH3(TM) Power MOSFET in D2PAK package
Trans MOSFET N-CH 620V 2.7A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 2.7A I(D), 620V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 620V, 2.7A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:620V; On Resistance Rds(on):2.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:45W; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)2.7 A
Drain to Source Breakdown Voltage620 V
Drain to Source Resistance2.5 Ω
Drain to Source Voltage (Vdss)620 V
Element ConfigurationSingle
Fall Time15.6 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance385 pF
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage620 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation45 W
Rds On Max2.5 Ω
Resistance2.5 Ω
Rise Time6.8 ns
Threshold Voltage3.75 V
Turn-Off Delay Time22 ns
Turn-On Delay Time9 ns
Dimensions
Height4.6 mm
Length10.75 mm
Width10.4 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB3N62K3.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant