STMicroelectronics STB2N62K3
N-channel 620 V, 3 Ohm, 2.2 A, D2PAK SuperMESH3(TM) Power MOSFET
$ 0.642
Obsolete
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB2N62K3.
Related Parts
Descriptions
Descriptions of STMicroelectronics STB2N62K3 provided by its distributors.
N-channel 620 V, 3 Ohm, 2.2 A, D2PAK SuperMESH3(TM) Power MOSFET
Trans MOSFET N-CH 620V 2.2A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 2.2A I(D), 620V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
CAP CER 0.1UF 630V X7T 1210
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)2.2 A
Drain to Source Breakdown Voltage620 V
Drain to Source Resistance3.6 Ω
Drain to Source Voltage (Vdss)620 V
Fall Time22 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance340 pF
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage620 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation45 W
Rds On Max3.6 Ω
Resistance3.6 Ω
Rise Time4.4 ns
Schedule B8541290080
Turn-Off Delay Time21 ns
Turn-On Delay Time8 ns
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB2N62K3.