STMicroelectronics STB33N65M2
$ 1.96
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Inventory History
3 month trend: -15.51%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB33N65M2.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-12-11
Lifecycle StatusProduction (Last Updated: 1 month ago)
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VishaySIHB22N60E-GE3
MOSFET, N CH, 600V, 21A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
Descriptions
Descriptions of STMicroelectronics STB33N65M2 provided by its distributors.
N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in D2PAK package
STB33N65M2 N-CHANNEL MOSFET TRANSISTOR, 24 A, 650 V, 3-PIN D2PAK
Mosfet, N-Ch, 650V, 24A, 150Deg C, 190W Rohs Compliant: Yes |Stmicroelectronics STB33N65M2
Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK T/R
Extremely low gate charge | MOSFET N-CH 650V 24A D2PAK
190W(Tc) 25V 4V@ 250µA 41.5nC@ 10 V 1individualNChannel 650V 140mΩ@ 12A,10V 24A 1.79nF@100V D2PAK SMD mount 4.83mm(height)
Power Field-Effect Transistor, 24A I(D), 650V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -15.51%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)24 A
Drain to Source Resistance140 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.79 nF
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Rds On Max140 mΩ
Schedule B8541290080
Turn-Off Delay Time72.5 ns
Turn-On Delay Time13.5 ns
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB33N65M2.