STMicroelectronics STB21N65M5
$ 2.18
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Inventory History
3 month trend: -48.68%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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STMicroelectronicsSTB26NM60N
N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in D2PAK package
Descriptions
Descriptions of STMicroelectronics STB21N65M5 provided by its distributors.
N-channel 650 V, 0.150 Ohm typ., 17 A MDmesh M5 Power MOSFET in D2PAK package
N-Channel 710 V 17 A 179 mOhm 125 W Surface Mount Power Mosfet - D2PAK
Trans MOSFET N-CH Si 650V 17A 3-Pin(2+Tab) D2PAK T/R
STB21N65M5 N-CHANNEL MOSFET TRANSISTOR, 17 A, 650 V, 2+TAB-PIN TO-263
650 V, 0.175 OHM, 17 A D2PAK N-CHANNEL MDMESH V POWER MOSFET Power Field-Effect Transistor, 17A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
125W(Tc) 25V 5V@ 250µA 50nC@ 10 V 1individualNChannel 650V 190mΩ@ 8.5A,10V 17A 1.95nF@100V D2PAK SMD mount 10.75mm*10.4mm*4.6mm
MOSFET, N CH, 650V, 17A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -48.68%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)17 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.95 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
PackagingTape and Reel
Power Dissipation125 W
Rds On Max179 mΩ
Resistance150 Ω
Rise Time10 ns
Schedule B8541290080
Threshold Voltage4 V
Dimensions
Height4.6 mm
Length10.75 mm
Width10.4 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant