STMicroelectronics STB23NM50N
$ 2.245
Production
Inventory History
3 month trend: +14.77%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB23NM50N.
CAD Models
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Descriptions
Descriptions of STMicroelectronics STB23NM50N provided by its distributors.
N-channel 500 V, 0.162 Ohm, 17 A, D2PAK MDmesh(TM) II Power MOSFET
STB23NM50N N-CHANNEL MOSFET TRANSISTOR, 17 A, 500 V, 2+TAB-PIN TO-263
N-Channel 550 V 0.19 O Surface Mount MDmesh II Power MosFet - D2PAK
Trans MOSFET N-CH 500V 17A 3-Pin(2+Tab) D2PAK T/R
500 V, 17 A, 0.162 OHM, D2PAK MDMESH N-CHANNEL II POWER MOSFET Power Field-Effect Transistor, 17A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
STMicroelectronics NChannel EnhancedMOSTube MDmeshseries, Vds=500 V, 17 A, D2PAK (TO-263)encapsulation, surface mount, 3Pin
MOSFET, N-CH, 500 V, 17 A, TO-263-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:17A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +14.77%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)17 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time29 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.33 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation125 W
Rds On Max190 mΩ
Resistance190 mΩ
Rise Time19 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time71 ns
Turn-On Delay Time6.6 ns
Dimensions
Height4.6 mm
Length10.75 mm
Width10.4 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB23NM50N.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant