STMicroelectronics STB21NM60ND
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | STB21NM60ND | 0 | 1 | 16h | ||||||||
| Win Source | WS-STB21NM60ND | 1,000 | 75 | 22h | ||||||||
| Worldway Electronics | STB21NM60ND | 24,483 | 7 | Tape & Reel | 21h | |||||||
| GreenTree Electronics | STB21NM60ND | 4,000 | 1d | |||||||||
| Aztech | STB21NM60ND | 8,301 | 18h |
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB21NM60ND.
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-09-12
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2019-04-25
LTD Date2019-10-25
Related Parts
STMicroelectronicsSTB26NM60N
N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in D2PAK package
STMicroelectronicsSTB23NM60ND
N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh(TM) II Power MOSFET (with fast diode) D2PAK
STMicroelectronicsSTB25NM60ND
Mosfet Transistor, N Channel, 21 A, 600 V, 0.13 Ohm, 10 V, 4 V Rohs Compliant: Yes
Descriptions
Descriptions of STMicroelectronics STB21NM60ND provided by its distributors.
N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in D2PAK package
Power Mosfet, N Channel, 17 A, 600 V, 0.17 Ohm, 10 V, 4 V Rohs Compliant: Yes
STB21NM60ND N-channel MOSFET Transistor, 17 A, 600 V, 2+Tab-Pin TO-263
Trans MOSFET N-CH 600V 17A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 17A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 600V, 17A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.17ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)17 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance220 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time48 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.8 nF
Max Operating Temperature150 °C
Max Power Dissipation140 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation140 W
Rds On Max220 mΩ
Resistance170 mΩ
Rise Time16 ns
Threshold Voltage4 V
Turn-Off Delay Time70 ns
Turn-On Delay Time18 ns
Dimensions
Height4.6 mm
Length10.75 mm
Width10.4 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB21NM60ND.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant