STMicroelectronics STB16N65M5
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | STB16N65M5 | 0 | 1 | 3h | ||||||||
| Microchip USA | STB16N65M5 | 2,639 | 600 | Tray | 19h | |||||||
| Win Source | WS-STB16N65M5 | 20 | 45 | 4h | ||||||||
| Worldway Electronics | STB16N65M5 | 13,761 | 7 | Tape & Reel | 2h | |||||||
| Aztech | STB16N65M5 | 9,680 | 23h |
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB16N65M5.
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-02-18
Lifecycle StatusObsolete (Last Updated: 1 month ago)
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Descriptions
Descriptions of STMicroelectronics STB16N65M5 provided by its distributors.
N-channel 650 V, 0.230 Ohm typ., 12 A MDmesh M5 Power MOSFET in D2PAK package
STB16N65M5 N-channel MOSFET Transistor, 12 A, 650 V, 3-Pin TO-263
Trans MOSFET N-CH Si 650V 12A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 12A I(D), 650V, 0.279ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 650V, 12A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.23ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:90W; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance279 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.25 nF
Max Operating Temperature150 °C
Max Power Dissipation90 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation90 W
Rds On Max299 mΩ
Resistance279 mΩ
Rise Time7 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time6 ns
Turn-On Delay Time25 ns
Dimensions
Height4.6 mm
Length10.75 mm
Width10.4 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB16N65M5.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant