STMicroelectronics STB13NM60N
$ 2.216
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | STB13NM60N | 5,000 | 1K | |||||||||
| Arrow Electronics | STB13NM60N | 5,000 | 1K | |||||||||
| DigiKey | 497-STB13NM60NCT-ND | 592 | 1 | Cut Tape | ||||||||
| TME | STB13NM60N | 0 | 1 | 23h | ||||||||
| Avnet | STB13NM60N | 0 | 1K | 3h |
Inventory History
3 month trend: -37.17%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB13NM60N.
CAD Models
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|---|---|---|---|
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 SnapEDA | Footprint | 3D | Download |
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Descriptions
Descriptions of STMicroelectronics STB13NM60N provided by its distributors.
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in D2PAK package
Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 600V 11A D2PAK
Power MOSFET, N Channel, 600 V, 11 A, 0.28 ohm, TO-263 (D2PAK), Surface Mount
STB13NM60N N-channel MOSFET Transistor, 11 A, 650 V, 3-Pin TO-263
N-Channel 650 V 0.38 O Surface Mount MDmesh II Power MosFet - D2PAK
90W(Tc) 25V 4V@ 250¦ÌA 30nC@ 10 V 1N 600V 360m¦¸@ 5.5A,10V 11A 790pF@50V D2PAK
Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Mosfet, N Ch, 600V, 11A, To-263; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Stmicroelectronics STB13NM60N
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -37.17%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)11 A
Drain to Source Resistance360 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance790 pF
Max Operating Temperature150 °C
Max Power Dissipation90 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation90 W
Rds On Max360 mΩ
Resistance360 mΩ
Rise Time8 ns
Threshold Voltage3 V
Turn-Off Delay Time30 ns
Turn-On Delay Time3 ns
Dimensions
Height4.6 mm
Length10.75 mm
Width10.4 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB13NM60N.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant