STMicroelectronics STB13N80K5
$ 2.17
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | STB13N80K5 | 399 | 1 | Cut Tape | ||||||||
| Arrow Electronics | STB13N80K5 | 4,000 | 1K | |||||||||
| Verical | STB13N80K5 | 4,000 | 1K | |||||||||
| DigiKey | 497-13860-1-ND | 474 | 1 | Cut Tape | ||||||||
| TME | STB13N80K5 | 0 | 1K | 11h |
Inventory History
3 month trend: +205%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-04-15
Lifecycle StatusProduction (Last Updated: 4 months ago)
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STMicroelectronicsSTB11NM80T4
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Descriptions
Descriptions of STMicroelectronics STB13N80K5 provided by its distributors.
N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in D2PAK package
STB13N80K5 N-channel MOSFET Transistor, 12 A, 800 V, 3-Pin D2PAK
190W(Tc) 30V 5V@ 100¦ÌA 29nC@ 10 V 1N 800V 450m¦¸@ 6A,10V 12A 870pF@100V D2PAK,TO-263-3
Trans MOSFET N-CH 800V 12A 3-Pin(2+Tab) D2PAK T/R
MOSFET N-CH 800V 12A D2PAK / N-channel 800 V, 0.37, 12 A Zener-protected SuperMESH 5 Power MOSFET in D²PAK, TO-220FP and TO-220 packages
Power Field-Effect Transistor, 12A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 800V, 12A, 190W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.37ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V;
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +205%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance450 mΩ
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance870 pF
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation190 W
Rds On Max450 mΩ
Resistance450 mΩ
Rise Time16 ns
Schedule B8541290080
Turn-Off Delay Time42 ns
Turn-On Delay Time16 ns
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant