STMicroelectronics STB12NK80ZT4
$ 2.347
Production
Inventory History
3 month trend: +31.49%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB12NK80ZT4.
CAD Models
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Descriptions
Descriptions of STMicroelectronics STB12NK80ZT4 provided by its distributors.
N-channel 800 V, 0.65 Ohm, 10.5 A Zener protected SuperMESH(TM) Power MOSFET in D2PAK package
STB12NK80ZT4 N-CHANNEL MOSFET TRANSISTOR, 10.5 A, 800 V, 4-PIN D2PAK
MOSFET N-CH 800V 10.5A D2PAK / Trans MOSFET N-CH 800V 10.5A 3-Pin(2+Tab) D2PAK T/R
N-Channel 800 V 0.75 Ohm Surface Mount Zener Protect SuperMesh MosFet-D2PAK
Mosfet, N-Ch, 800V, 10.5A, To-263; Transistor Polarity:n Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:10.5A; On Resistance Rds(On):0.65Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +31.49%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)10.5 A
Current Rating10.5 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance750 mΩ
Drain to Source Voltage (Vds)800 V
Dual Supply Voltage800 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.62 nF
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Nominal Vgs3.75 V
Number of Elements1
Power Dissipation190 W
Rds On Max750 mΩ
Resistance750 mΩ
Rise Time18 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage3.75 V
Turn-Off Delay Time70 ns
Turn-On Delay Time30 ns
Voltage Rating (DC)800 V
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB12NK80ZT4.
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant