STMicroelectronics STB13NK60ZT4
$ 1.836
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Inventory History
3 month trend: -42.32%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB13NK60ZT4.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
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N-Channel 600 V 0.45 Ohm Surface Mount FDMesh Power MosFet - D2PAK-3
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Power MOSFET, N Channel, 500 V, 4.5 A, 0.48 ohm, TO-263 (D2PAK), Surface Mount
Descriptions
Descriptions of STMicroelectronics STB13NK60ZT4 provided by its distributors.
N-Channel 600 V, 0.48 Ohm, 13 A D2PAK Zener-Protected SuperMesh(TM) POWER MOSFET
STB13NK60ZT4 N-channel MOSFET Transistor, 13 A, 600 V, 3-Pin D2PAK
Power MOSFET, N Channel, 600 V, 4.5 A, 0.48 ohm, TO-263 (D2PAK), Surface Mount
N-Channel 600 V 550 mOhm 150 W Surface Mount Zener Protected Mosfet - D2Pak
Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 13A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 600V, 13A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):480mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:150W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:13A; Package / Case:D2-PAK; Power Dissipation Pd:150W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -42.32%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)13 A
Current Rating13 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance550 mΩ
Drain to Source Voltage (Vdss)600 V
Dual Supply Voltage600 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.03 nF
Max Operating Temperature150 °C
Max Power Dissipation135 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs3.75 V
Number of Elements1
PackagingTape and Reel
Power Dissipation150 W
Rds On Max550 mΩ
Resistance550 MΩ
Rise Time14 ns
Schedule B8541290080
TerminationSMD/SMT
Turn-Off Delay Time61 ns
Turn-On Delay Time22 ns
Voltage Rating (DC)600 V
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB13NK60ZT4.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant