STMicroelectronics MJD122T4
$ 0.344
Production
Inventory History
3 month trend: -18.83%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics MJD122T4.
CAD Models
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.344
$ 0.415
$ 0.415
Stock
5,202,047
3,592,864
3,592,864
Authorized Distributors
6
6
6
Mount
Surface Mount
-
-
Case/Package
TO-252
DPAK
DPAK
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
100 V
100 V
100 V
Max Collector Current
8 A
8 A
8 A
Transition Frequency
-
4 MHz
4 MHz
Collector Emitter Saturation Voltage
4 V
2 V
2 V
hFE Min
100
100
100
Power Dissipation
20 W
20 W
20 W
Related Parts
Diodes Inc.ZXTN4004KTC
Bipolar (BJT) Single Transistor, NPN, 150 V, 1 A, 3.8 W, TO-252 (DPAK), Surface Mount
Descriptions
Descriptions of STMicroelectronics MJD122T4 provided by its distributors.
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
TRANSISTOR, DARLINGTON, NPN, AMPLIFIER, POWER, VO 100V, VI 5V, IO 8A, PD 20W, TO-252
Trans Darlington NPN 100V 8A 20000mW 3-Pin(2+Tab) DPAK T/R
Darlington Transistors, NPN, 100 V, 8 A, 20 W, 1000 hFE, 3 Pins, TO-252 (DPAK)
TRANSISTOR, BJT, NPN, 100V, 8A, TO-252-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 20W; DC Collector Current: 5A; DC Current Gain hFE: 1000hFE; Trans
Darlington Transistor, Npn, 100V, To-252; Transistor Polarity:Npn; No. Of Pins:3Pins; Transistor Mounting:Surface Mount; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:100V Rohs Compliant: Yes |Stmicroelectronics MJD122T4
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) V = 100 / DC Current Gain (hFE) = 100 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 20 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 4 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 4.5
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -18.83%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-252
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.799996 g
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage4 V
Collector Emitter Voltage (VCEO)100 V
Current Rating5 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min100
Max Breakdown Voltage100 V
Max Collector Current8 A
Max Operating Temperature150 °C
Max Power Dissipation20 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation20 W
Schedule B8541290080
Voltage Rating (DC)100 V
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics MJD122T4.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant