STMicroelectronics BD911
$ 0.425
Production
Inventory History
3 month trend: -1.93%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics BD911.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1989-06-01
Lifecycle StatusProduction (Last Updated: 5 months ago)
Descriptions
Descriptions of STMicroelectronics BD911 provided by its distributors.
Transistor GP BJT NPN 100V 15A 3-Pin (3+Tab) TO-220 Tube
Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Power Bipolar, NPN, 4V, 500mA, TO-220, Tube
STMicroelectronics SCT
Bipolar Transistor; Collector Emitter Voltage, V(br)ceo:100V; DC Current Gain Min (hfe):15; Package/Case:3-TO-220AB; Collector Current @ hfe:5A; DC Collector Current:15A; Leaded Process Compatible:Yes; No. of Pins:3 ;RoHS Compliant: Yes
TRANSISTOR, NPN, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency Typ ft:3MHz; Power Dissipation Pd:90W; DC Collector Current:15A; DC Current Gain hFE:40; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Application Code:GP; Collector Emitter Voltage Vces:1V; Continuous Collector Current Ic Max:15A; Current Gain Hfe Max:250; Current Ic @ Vce Sat:5A; Current Ic Continuous a Max:15A; Current Ic hFE:500mA; Device Marking:BD911; Gain Bandwidth ft Typ:3MHz; Hfe Min:40; Hfe Typ:40; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Pd:90W; Power Dissipation Ptot Max:90W; Termination Type:Through Hole; Voltage Vcbo:100V
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -1.93%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight90.718474 g
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage3 V
Collector Emitter Voltage (VCEO)100 V
Current Rating15 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency3 MHz
Gain Bandwidth Product3 MHz
hFE Min5
Max Collector Current15 A
Max Frequency3 MHz
Max Operating Temperature150 °C
Max Power Dissipation90 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation90 W
Transition Frequency3 MHz
Voltage Rating (DC)100 V
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics BD911.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant