onsemi PZT651T1G
$ 0.208
Production
Inventory History
3 month trend: -2.85%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1993-12-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descriptions
Descriptions of onsemi PZT651T1G provided by its distributors.
Bipolar (BJT) Single Transistor, NPN, 60 V, 2 A, 800 mW, SOT-223, Surface Mount
60V 800mW 75@1A,2V 2A NPN SOT-223 Bipolar Transistors - BJT ROHS
Bipolar Transistors (BJT); PZT651T1G; ON SEMICONDUCTOR; NPN; 4; 60 V; 2 A
Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA
PZT Series 60 V 2 A SMT NPN Silicon Planar Epitaxial Transistor - SOT-223
500mV@ 200mA,2A NPN 800mW 5V 100nA 80V 60V 2A SOT-223 SMD mount 6.5mm*3.5mm*1.63mm
Trans GP BJT NPN 60V 2A Automotive 4-Pin(3+Tab) SOT-223 T/R
Trans Bjt Single, Npn, 60V, 2A; |Onsemi PZT651T1G.
This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.
BIPOLAR TRANSISTOR, NPN, 60V; TRANSISTOR; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 75MHz; Power Dissipation Pd: 800mW; DC Collector Current: 2A; DC Current Gain hFE: 75hFE; Tr
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -2.85%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-223-4
Contact PlatingTin
Number of Pins4
Number of Terminals4
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)60 V
Current Rating2 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency75 MHz
Gain Bandwidth Product75 MHz
hFE Min40
Max Breakdown Voltage60 V
Max Collector Current2 A
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation800 mW
Min Operating Temperature-65 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation800 mW
Schedule B8541210080
Transition Frequency75 MHz
Voltage Rating (DC)60 V
Dimensions
Height1.65 mm
Length6.7 mm
Width3.7 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements