onsemi NTP5412NG
Tube Through Hole N-Channel Single Mosfet Transistor 60A Tc 60A 125W 89ns
$ 1.074
Obsolete
Price and Stock
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Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-11-03
Lifecycle StatusObsolete (Last Updated: 2 months ago)
LTB Date2011-01-06
LTD Date2011-07-02
Related Parts
InfineonIRFZ48VPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 12 Milliohms;ID 72A;TO-220AB;PD 150W;gFS 35S
InfineonIRFZ48NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 14 Milliohms;ID 64A;TO-220AB;PD 130W;gFS 24S
Descriptions
Descriptions of onsemi NTP5412NG provided by its distributors.
Tube Through Hole N-Channel Single Mosfet Transistor 60A Tc 60A 125W 89ns
Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-220AB Rail
Power Field-Effect Transistor, 60A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
125W(Tc) 20V 4V@ 250µA 85nC@ 0 V 1individualNChannel 60V 14mΩ@ 30A,10V 60A 3.22nF@25V TO-220 Through hole mounting 10.28mm*4.82mm*9.28mm
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)60 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time89 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.22 nF
Max Operating Temperature175 °C
Max Power Dissipation125 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation125 W
Rds On Max14 mΩ
Rise Time115 ns
Turn-Off Delay Time41 ns
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Compliance Statements