onsemi NTD5407NT4G
$ 0.468
Obsolete
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Supply Chain
Country of OriginVietnam
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-10-12
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-10-05
LTD Date2015-04-05
Related Parts
onsemiSTD5407NT4G
Power MOSFET 40V, 38A, 26 mOhm, Single N-Channel, DPAK. Power MOSFET 40V, 38A, 26 mOhm, Single N-Channel, DPAK.
onsemiNVD5806NT4G
Power MOSFET 40V, 33A, 19 mOhm, Single N-Channel, DPAK. Power MOSFET 40V 33A 19 mOhm Single N-Channel DPAK
STMicroelectronicsSTD17NF03LT4
N-channel 30 V, 0.038 Ohm, 17 A STripFET(TM) II Power MOSFET in DPAK package
STMicroelectronicsSTD18NF03L
N-channel 30 V, 0.038 Ohm typ., 17A STripFET(TM) II Power MOSFET in a DPAK package
Descriptions
Descriptions of onsemi NTD5407NT4G provided by its distributors.
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 7.6A Ta 38A Tc 38A 75W 51ns
Power MOSFET 40V 38A 26 mOhm Single N-Channel DPAK
NTD5407NT4G N-CHANNEL MOSFET TRANSISTOR, 38 A, 40 V, 3-PIN DPAK
MOSFETs- Power and Small Signal NFET 40V 38A PB
Trans MOSFET N-CH 40V 7.6A 3-Pin(2+Tab) DPAK T/R
Power Field-Effect Transistor, 38A I(D), 40V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
Case/PackageDPAK
Contact PlatingTin
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)38 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance26 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time51 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1 nF
Max Operating Temperature175 °C
Max Power Dissipation75 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation75 W
Rds On Max26 mΩ
Rise Time17 ns
Turn-Off Delay Time66 ns
Turn-On Delay Time10 ns
Dimensions
Height2.38 mm
Length6.73 mm
Width6.22 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements