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CAD Models
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Alternate Parts
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CAD Models
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Supply Chain
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-04-04
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2022-06-17
LTD Date2022-12-17
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 weeks ago)
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onsemiNTD4806NA-1G
Tube Through Hole N-Channel Single Mosfet Transistor 11.3A Ta 79A Tc 14A 2.14W 4.7ns
Descriptions
Descriptions of onsemi NTD4808N-1G provided by its distributors.
Single N-Channel Power MOSFET 30V 63A 8mΩ
MOSFETs- Power and Small Signal NFET 30V 63A 8MOHM
Trans MOSFET N-CH 30V 13.8A 3-Pin(3+Tab) IPAK Rail
Power MOSFET 30 V 63 A N-Channel DPAK/IPAK
Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Mosfet, N-Ch, 30V, 63A, To-251; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0067Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Rohs Compliant: Yes |Onsemi NTD4808N-1G
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-251
Number of Pins4
Number of Terminals3
Technical
Continuous Drain Current (ID)9.8 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance12.4 mΩ
Drain to Source Voltage (Vds)30 V
Element ConfigurationSingle
Fall Time5.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.538 nF
Max Operating Temperature175 °C
Max Power Dissipation54.6 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2 W
Rds On Max8 mΩ
Rise Time102 ns
Schedule B8541290080
Turn-Off Delay Time11 ns
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Compliance Statements