onsemi NTD2955T4G

Name: onsemi NTD2955T4G
Brand: onsemi
SKU: NTD2955T4G

Single P-Channel 60 V 0.18 Ohm 30 nC 55 W Silicon SMT Mosfet - TO-252-3

$ 0.583

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Future Electronics	6	NTD2955T4G	170,000	2500	Tape & Reel					0.265
Avnet	2	NTD2955T4G	137,500	2500						0.270	1d
Newark	3	NTD2955T4G	1,485	1	Cut Tape	1.940	1.300	0.924	0.924	0.924
Verical	4	NTD2955T4G	5,000	2500						0.323
Arrow Electronics	3	NTD2955T4G	78	1		0.851	0.678	0.484	0.484	0.484

Inventory History

3 month trend: +7.53%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi NTD2955T4G.

JRH Electronics

Datasheet8 pages21 years ago

IHS

Upverter

Future Electronics

Newark

Inventory History

3 month trend:

+7.53%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiNTD2955T4G

onsemiSVD2955T4G

Price @ 1000

$ 0.583

$ 0.468

Stock

8,863,397

677,029

Authorized Distributors

Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

60 V

-60 V

Continuous Drain Current (ID)

12 A

Threshold Voltage

-2.8 V

Rds On Max

180 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

55 W

Input Capacitance

750 pF

Supply Chain

Country of OriginMainland China, Malaysia, Vietnam

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-07-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Descriptions

Descriptions of onsemi NTD2955T4G provided by its distributors.

Single P-Channel 60 V 0.18 Ohm 30 nC 55 W Silicon SMT Mosfet - TO-252-3

Future Electronics

Single P-Channel Power MOSFET -60V, -12A, 180mΩ

onsemi

Power MOSFET, P Channel, 60 V, 12 mA, 0.18 ohm, TO-252 (DPAK), Surface Mount

Avnet

NTD2955T4G P-CHANNEL MOSFET TRANSISTOR, 12 A, 60 V, 3-PIN DPAK

RS (Formerly Allied Electronics)

Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 60V 12A DPAK

Win Source

MOSFET-Power, P-Channel, DPAK Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

P Channel Mosfet, -60V, 12A, D-Pak, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8Vrohs Compliant: Yes |Onsemi NTD2955T4G.

Newark

Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -12 / Drain-Source Voltage (Vds) V = -60 / ON Resistance (Rds(on)) mOhm = 180 / Gate-Source Voltage V = 20 / Fall Time ns = 90 / Rise Time ns = 85 / Turn-OFF Delay Time ns = 40 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 55

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