onsemi MJD350TF
0.5 A, 300 V High Voltage PNP Bipolar Power Transistor
$ 0.269
Obsolete
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.269
$ 0.342
$ 0.342
Stock
188,809
848,661
848,661
Authorized Distributors
2
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
DPAK
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
300 V
300 V
300 V
Max Collector Current
500 mA
500 mA
500 mA
Transition Frequency
3 MHz
-
-
Collector Emitter Saturation Voltage
-
-
-
hFE Min
30
30
30
Power Dissipation
1.56 W
15 W
15 W
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusObsolete (Last Updated: 1 day ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 day ago)
Descriptions
Descriptions of onsemi MJD350TF provided by its distributors.
0.5 A, 300 V High Voltage PNP Bipolar Power Transistor
MJD Series PNP 1.56 W 300 V 0.5 A SMT Epitaxial Silicon Transistor - TO-252-3
Trans GP BJT PNP 300V 0.5A 1560mW 3-Pin(2+Tab) DPAK T/R
Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Collector Base Voltage (VCBO)-300 V
Collector Emitter Breakdown Voltage300 V
Collector Emitter Voltage (VCEO)300 V
Current Rating-500 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-3 V
hFE Min30
Max Breakdown Voltage300 V
Max Collector Current500 mA
Max Operating Temperature150 °C
Max Power Dissipation15 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityPNP
Power Dissipation1.56 W
Transition Frequency3 MHz
Voltage Rating (DC)-300 V
Dimensions
Height2.3 mm
Length6.6 mm
Width6.1 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements