onsemi MJD31CRLG

Name: onsemi MJD31CRLG
Brand: onsemi
SKU: MJD31CRLG

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

$ 0.434

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Newark	2	MJD31CRLG	4,357	5	Cut Tape		0.923	0.613	0.479	0.479
Verical	3	MJD31CRLG	556	4			0.752	0.536	0.391	0.328
Arrow Electronics		MJD31CRLG	556	1		1.183	0.752	0.536	0.391	0.391
Rochester Electronics		MJD31CRLG	2,202					0.444	0.369	0.329	6h
DigiKey	3	MJD31CRLGOSCT-ND	2,111	1	Cut Tape	1.510	0.949	0.630	0.493	0.493

Inventory History

3 month trend: +35.01%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi MJD31CRLG.

IHS

Datasheet11 pages3 years ago

Upverter

onsemi

Newark

Master Electronics

Inventory History

3 month trend:

+35.01%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiMJD31CRLG

onsemiMJD31CT4G

Price @ 1000

$ 0.434

$ 0.261

Stock

425,787

4,921,455

Authorized Distributors

Mount

Case/Package

DPAK

Polarity

NPN

Collector Emitter Breakdown Voltage

100 V

Max Collector Current

3 A

Transition Frequency

3 MHz

Collector Emitter Saturation Voltage

1.2 V

hFE Min

Power Dissipation

1.56 W

Supply Chain

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi MJD31CRLG provided by its distributors.

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

IHS

3.0 A, 100 V NPN Bipolar Power Transistor

onsemi

MJD Series 100 V 3 A NPN Complementary Power Transistor - TO-252-3

Future Electronics

1.2V@ 375mA,3A NPN 1.56W 5V 50¦ÌA 100V 100V 3A TO-252 6.73mm*6.22mm*2.38mm

UnikeyIC

Trans GP BJT NPN 100V 3A 1560mW 3-Pin(2+Tab) DPAK T/R

Verical

BIP DPAK NPN 3A 100V TR; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 15W; DC Collector Current: 3A; DC Current Gain hFE: 10hFE; Transistor Case Style

Farnell

Transistor Polarity:Npn; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:15W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:3Mhz; Dc Current Gain Hfe Min:10Hfe Rohs Compliant: Yes |Onsemi MJD31CRLG.

Newark