onsemi MJD112-1G

Name: onsemi MJD112-1G
Brand: onsemi
SKU: MJD112-1G

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

$ 0.469

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Future Electronics		MJD112-1G	73	50	Tube			0.430	0.405	0.385
Verical	8	MJD112-1G	525	75				0.384	0.384	0.384
Arrow Electronics	2	MJD112-1G	1,290	1		1.546	1.546	0.624	0.526	0.462
Master Electronics		MJD112-1G	43,200	75				0.370	0.362	0.341
Onlinecomponents.com		MJD112-1G	43,200	75	Bulk			0.370	0.362	0.341

Inventory History

3 month trend: -2.28%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi MJD112-1G.

Upverter

Datasheet8 pages15 years ago

Datasheet8 pages20 years ago

Master Electronics

Farnell

onsemi

DigiKey

Inventory History

3 month trend:

-2.28%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiMJD112-1G

onsemiMJD112-001

Price @ 1000

$ 0.469

$ 0.175

Stock

1,068,943

50,239

Authorized Distributors

Mount

Case/Package

TO-251

Polarity

NPN

Collector Emitter Breakdown Voltage

100 V

Max Collector Current

2 A

Transition Frequency

25 MHz

Collector Emitter Saturation Voltage

2 V

hFE Min

200

Power Dissipation

1.75 W

20 W

Supply Chain

Country of OriginMainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1999-01-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Related Parts

onsemiMJD112-001

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

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onsemiKSH122ITU

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onsemi2SC4135T-E

Bipolar Transistor, (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Details

Descriptions

Descriptions of onsemi MJD112-1G provided by its distributors.

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

IHS

2.0 A, 100 V NPN Darlington Bipolar Power Transistor

onsemi

MJD Series 100 V 2 A Through Hole NPN Complementary Darlington Power Transistor

Future Electronics

ON SEMI MJD112-1G NPN DARLINGTON TRANSISTOR, 2 A 100 V HFE:1000, 3-PIN IPAK

RS (Formerly Allied Electronics)

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators converters and power amplifiers.

North Star Micro

TRANSISTOR, NPN, 100V, 2A, TO-251; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 25MHz; Power Dissipation Pd: 20W; DC Collector Current: 2A; DC Current Gain hFE: 200hFE; Transisto

Farnell

Darlington Transistor, Npn, 100V, Dpak-3; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:100V; Power Dissipation Pd:20W; Dc Collector Current:2A; Rf Transistor Case:To-252 (Dpak); No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi MJD112-1G

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