onsemi KSC3503DSTU
Obsolete
Price and Stock
Authorized Distributors
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SKU
Min
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Bulk Pricing
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Descriptions
Descriptions of onsemi KSC3503DSTU provided by its distributors.
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
KSC Series NPN 7 W 300 V 100 mA Through Hole Epitaxial Transistor - TO-126
onsemi NPN Transistor, TO-126, TH, 100mA Ic, 300V Vceo
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
TRANSISTOR, BIPOL, NPN, 300V, TO-225AA-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 300V; Transition Frequency ft: 150MHz; Power Dissipation Pd; Available until stocks are exhausted Alternative available
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-126
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight761 mg
Technical
Collector Base Voltage (VCBO)300 V
Collector Emitter Breakdown Voltage300 V
Collector Emitter Saturation Voltage600 mV
Collector Emitter Voltage (VCEO)300 V
Current Rating100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Gain Bandwidth Product150 MHz
hFE Min60
Max Breakdown Voltage300 V
Max Collector Current100 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation7 W
Min Operating Temperature-50 °C
Number of Elements1
PolarityNPN
Power Dissipation7 W
Schedule B8541290080
Transition Frequency150 MHz
Voltage Rating (DC)300 V
Dimensions
Height14.2 mm
Length8 mm
Width3.25 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Compliance Statements