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Min
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Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-03-23
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2009-12-04
LTD Date2010-06-04
Descriptions
Descriptions of onsemi IRFS634B_FP001 provided by its distributors.
Trans MOSFET N-CH 250V 8.1A 3-Pin(3+Tab) TO-220F Rail
Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-220F, 3 PIN
38W(Tc) 30V 4V@ 250¦ÌA 38nC@ 10V 1individualNChannel 250V 450m¦¸@ 4.05A,10V 8.1A 1nF@25V TO-220F Through hole mounting 10.67mm*4.7mm*16.3mm
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)8.1 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance450 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time65 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1 nF
Max Operating Temperature150 °C
Max Power Dissipation38 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation38 W
Rds On Max450 mΩ
Rise Time75 ns
Turn-Off Delay Time100 ns