onsemi HGTP7N60C3D

Name: onsemi HGTP7N60C3D
Brand: onsemi
SKU: HGTP7N60C3D

Trans IGBT Chip N-CH 600V 14A 3-Pin(3+Tab) TO-220AB Rail

Obsolete

Datasheet

Price and Stock

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Distributor		SKU		Min
Farnell		HGTP7N60C3D..	0	1	2.307*	2.307*	2.307*	2.307*	2.307*	2h
Component Stockers USA		HGTP7N60C3D	536		1.450	1.420	1.370	1.330	1.330	>1wk
Win Source		WS-HGTP7N60C3D	6,920	90			0.672	0.448	0.448	3h
Worldway Electronics	2	HGTP 7N60C3D	29,724	7						3h
SHENGYU ELECTRONICS		HGTP7N60C3D	11,138	1	0.153	0.150	0.150	0.140	0.130	9h

CAD Models

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Alternate Parts

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Datasheets & Documents

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Farnell

Datasheet0 pages0 years ago

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CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1996-05-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2013-09-11

LTD Date2014-03-11

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Descriptions

Descriptions of onsemi HGTP7N60C3D provided by its distributors.

Trans IGBT Chip N-CH 600V 14A 3-Pin(3+Tab) TO-220AB Rail

Verical

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Onlinecomponents.com

Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB

IHS

IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:14A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:60W; Package/Case:TO-220AB ;RoHS Compliant: Yes

Newark

IGBT, 600V, 14A, TO-220; DC Collector Current: 14A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220AB; No. of Pins: 3Pins;

Farnell