onsemi FQU2N50BTU-WS
$ 0.255
Obsolete
Price and Stock
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Distributor
SKU
Min
Pkg
Bulk Pricing
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-11-12
Lifecycle StatusObsolete (Last Updated: 1 week ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
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Descriptions
Descriptions of onsemi FQU2N50BTU-WS provided by its distributors.
Power MOSFET, N-Channel, QFET®, 500 V, 1.6 A, 5.3 Ω, IPAK
Trans MOSFET N-CH 500V 1.6A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FQU2N50BTU-WS)
Power Field-Effect Transistor, 1.6A I(D), 500V, 5.3ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-251AA
2.5W(Ta)，30W(Tc) 30V 3.7V@ 250µA 8nC@ 10 V 1individualNChannel 500V 5.3Ω@ 800mA,10V 1.6A 230pF@25V TO-251 Through hole mounting 6.8mm*2.5mm*6.3mm
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight343.08 mg
Technical
Continuous Drain Current (ID)1.6 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance5.3 Ω
Drain to Source Voltage (Vds)500 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance230 pF
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max5.3 Ω
Rise Time25 ns
Turn-Off Delay Time10 ns
Turn-On Delay Time6 ns
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Compliance Statements