onsemi FQT4N25TF

Name: onsemi FQT4N25TF
Brand: onsemi
SKU: FQT4N25TF

Power Mosfet, N-channel, Qfet®, 250 V, 0.83 A, 1.75 Ω, SOT-223

$ 0.463

EOL

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Distributor	SKU		Min	Pkg
Arrow Electronics	FQT4N25TF	45	1		0.774	0.589	0.521	0.521	0.521
Verical	FQT4N25TF	45	6			0.589	0.469	0.404	0.404
Microchip USA	FQT4N25TF	316	3500						0.196	11h
Weyland Electronics Group Pte. Ltd.	FQT4N25TF	66,133	1	Tape & Reel	3.756	3.756	3.756	3.756	3.756	1d
Win Source	WS-FQT4N25TF	89,100	150					0.299	0.259	20h

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element14 APAC

Datasheet0 pages0 years ago

IHS

Fairchild Semiconductor

onsemi

Newark

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Supply Chain

Country of OriginSouth Korea

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2001-06-04

Lifecycle StatusEOL (Last Updated: 4 days ago)

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)

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Descriptions

Descriptions of onsemi FQT4N25TF provided by its distributors.

Power MOSFET, N-Channel, QFET®, 250 V, 0.83 A, 1.75 Ω, SOT-223

onsemi

Trans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 250V 0.83A SOT-223

Win Source

N-Channel 250 V 1.75 Ohm Surface Mount Mosfet - SOT-223

Future Electronics

MOSFET, N-CH, 250V, 0.83A, SOT-223-3; Transistor Polarity:N Channel; Continuous Drain Current Id:830mA; Source Voltage Vds:250V; On Resistance

element14 APAC

MOSFET, N-CH, 250V, 0.83A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 830mA; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 1.38ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

Farnell

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor