onsemi FQPF8N60CFT
Power Mosfet, N-channel, Qfet®, Frfet®, 600 V, 6.26 A, 1.5 Ω, TO-220F
$ 1.259
EOL
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Inventory History
3 month trend: -73.81%
CAD Models
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Alternate Parts
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-02-27
Lifecycle StatusEOL (Last Updated: 2 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
Related Parts
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STMicroelectronicsSTP6NK60ZFP
N-channel 600 V - 1 Ohm - 6 A - TO-220 Zener-Protected SuperMESH(TM) Power MOSFET
Descriptions
Descriptions of onsemi FQPF8N60CFT provided by its distributors.
Power MOSFET, N-Channel, QFET®, FRFET®, 600 V, 6.26 A, 1.5 Ω, TO-220F
Trans MOSFET N-CH 600V 6.26A 3-Pin(3+Tab) TO-220FP Tube
FQPF Series 600V 7.5A 147W Through Hole N-Channel QFet® FRFet® Mosfet - TO-220F
Power Field-Effect Transistor, 6.26A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
48W(Tc) 30V 4V@ 250µA 36nC@ 10 V 1individualNChannel 600V 1.5Ω@ 3.13A,10V 6.26A 1.255nF@25V TO-220F-3 Through hole mounting 10.67mm*4.7mm*16.3mm
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -73.81%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)6.26 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance1.5 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time64.5 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.255 nF
Max Operating Temperature150 °C
Max Power Dissipation48 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation48 W
Rds On Max1.5 Ω
Rise Time60.5 ns
Turn-Off Delay Time81 ns
Turn-On Delay Time16.5 ns
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements