onsemi FQPF7N65CYDTU
$ 0.549
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
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Distributor
SKU
Min
Pkg
Bulk Pricing
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-06-02
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 weeks ago)
Related Parts
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onsemiFQPF8N60CYDTU
MOSFET N-CH 600V 7.5A TO-220F / Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220F Rail
Descriptions
Descriptions of onsemi FQPF7N65CYDTU provided by its distributors.
Power MOSFET, N-Channel, QFET®, 650 V, 7 A, 1.4 Ω, TO-220F
52W(Tc) 30V 4V@250µA 36nC@10V N-Ch MOSFET 650V 1.4Ω@3.5A,10V 7A 1.245nF@25V TO-220F-3 Y-Forming TH 10.67mm × 4.7mm × 16.3mm
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.565 g
Technical
Continuous Drain Current (ID)7 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance1.4 Ω
Drain to Source Voltage (Vds)650 V
Element ConfigurationSingle
Fall Time55 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.245 nF
Max Operating Temperature150 °C
Max Power Dissipation52 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation52 W
Rds On Max1.4 Ω
Rise Time50 ns
Schedule B8541290080
Turn-Off Delay Time90 ns
Turn-On Delay Time20 ns
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Compliance Statements