onsemi FQP19N20

Power MOSFET, N-Channel, QFET®, 200 V, 19.4 A, 150 mΩ, TO-220

N-Channel 200 V 0.15 Ohm Flange Mount Mosfet - TO-220-3

Trans MOSFET N-CH 200V 19.4A 3-Pin(3+Tab) TO-220AB Rail

Power Field-Effect Transistor, 19.4A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:19.4A; Drain Source Voltage Vds:200V; On Resistance Rds(on):120mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Alternate Case Style:SOT-78B; Avalanche Single Pulse Energy Eas:250mJ; Capacitance Ciss Typ:1220pF; Current Id Max:19.4A; Current Temperature:25°C; Device Marking:FQP19N20; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:120mohm; Package / Case:TO-220; Pin Configuration:a; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Power Dissipation Ptot Max:140W; Pulse Current Idm:78A; Reverse Recovery Time trr Typ:140ns; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V