Related Parts
onsemiFQI6N40CTU
73W(Tc) 30V 4V@250µA 20nC@10V N-Ch MOSFET 400V 1Ω@3A,10V 6A 625pF@25V I2PAK/TO-262 TH 10.29mm × 4.83mm × 7.88mm
Descriptions
Descriptions of onsemi FQI5N15TU provided by its distributors.
Trans MOSFET N-CH 150V 5.4A 3-Pin(3+Tab) I2PAK Rail
MOSFET N-CH 150V 5.4A I2PAK
Power Field-Effect Transistor, 5.4A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
N-CHANNEL POWER MOSFET
MOSFETs 150V N-Channel QFET
3.75W(Ta)，54W(Tc) 4V@ 250µA 7nC@ 10V 1individualNChannel 150V 800mΩ@ 2.7A,10V 230pF@25V I2PAK，TO-262 Through hole mounting
MISCELLANEOUS MOSFETS;
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)5.4 A
Current Rating5.3 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance800 mΩ
Drain to Source Voltage (Vds)150 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance230 pF
Max Operating Temperature175 °C
Max Power Dissipation54 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.75 W
Rds On Max800 mΩ
Rise Time45 ns
Turn-Off Delay Time13 ns
Voltage Rating (DC)150 V
Compliance
Environmental Classification
Lead FreeLead Free
REACH SVHCAffected
RoHSCompliant
Compliance Statements