Related Parts
onsemiFQI6N40CTU
73W(Tc) 30V 4V@250µA 20nC@10V N-Ch MOSFET 400V 1Ω@3A,10V 6A 625pF@25V I2PAK/TO-262 TH 10.29mm × 4.83mm × 7.88mm
Descriptions
Descriptions of onsemi FQI5P10TU provided by its distributors.
Trans MOSFET P-CH 100V 4.5A 3-Pin(3+Tab) I2PAK Rail
MOSFET P-CH 100V 4.5A I2PAK
Power Field-Effect Transistor, 4.5A I(D), 100V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
P-CHANNEL POWER MOSFET
MOSFETs 100V P-Channel QFET
3.75W(Ta)，40W(Tc) 4V@ 250µA 8.2nC@ 10V 1individualPChannel 100V 1.05Ω@ 2.25A,10V 250pF@25V I2PAK，TO-262 Through hole mounting
MISCELLANEOUS MOSFETS;
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)4.5 A
Current Rating-4.5 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance1.05 Ω
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance250 pF
Max Operating Temperature175 °C
Max Power Dissipation40 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.75 W
Rds On Max1.05 Ω
Rise Time70 ns
Turn-Off Delay Time12 ns
Voltage Rating (DC)-100 V
Compliance
Environmental Classification
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Compliance Statements