onsemi FQD16N25CTM

Name: onsemi FQD16N25CTM
Brand: onsemi
SKU: FQD16N25CTM

N-Channel Power MOSFET, QFET®, 250 V, 16 A, 270 mΩ, DPAK

$ 0.492

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Distributor		SKU		Min	Pkg
Avnet	4	FQD16N25CTM	110,000	2500						0.494	18h
Future Electronics	3	FQD16N25CTM	12,500	2500	Tape & Reel					0.485
Newark	3	FQD16N25CTM	15,074	1	Cut Tape	0.382	0.382	0.382	0.382	0.382
Master Electronics		FQD16N25CTM	2,500	50				0.530	0.480	0.444
Onlinecomponents.com		FQD16N25CTM	2,500	50	Bulk			0.530	0.480	0.444

Inventory History

3 month trend: +13.31%

CAD Models

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Alternate Parts

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Datasheets & Documents

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JRH Electronics

Datasheet0 pages0 years ago

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Fairchild Semiconductor

onsemi

Inventory History

3 month trend:

+13.31%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2006-04-05

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FQD16N25CTM provided by its distributors.

N-Channel Power MOSFET, QFET®, 250 V, 16 A, 270 mΩ, DPAK

onsemi

N-Channel 250 V 0.27 Ohm Surface Mount Mosfet - TO-252-3

Future Electronics

N-CHANNEL MOSFET; Transistor Type:MOSFET; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes

Newark

Power Field-Effect Transistor, 16A I(D), 250V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Semicontronic

MOSFET, N CH, 250V, 16A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.22ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:160W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (18-Jun-2012)

Farnell

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor