onsemi FQA36P15
$ 4.09
Production
Inventory History
3 month trend: -2.67%
CAD Models
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Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-10-02
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.045Ohm;ID 41A;TO-220AB;PD 200W;VGS +/-30V
InfineonIRFIB41N15DPBF
150V Single N-Channel HEXFET Power MOSFET in a TO-220 Full-Pak(Iso), FULLPAK220-3, RoHS
Descriptions
Descriptions of onsemi FQA36P15 provided by its distributors.
P-Channel Power MOSFET, QFET®, -150 V, -36 A, 90 mΩ, TO-3P
FQA36P15 Series 150 V 0.090 Ohm Through Hole N-Channel Mosfet - TO-3PN
MOSFET, P, TO-3P; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-150V; Current, Id Cont:-36A; Resistance, Rds On:0.09ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-4V; Case Style:TO-3P; Termination Type:Through Hole
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -2.67%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.401 g
Technical
Continuous Drain Current (ID)36 A
Current Rating-36 A
Drain to Source Breakdown Voltage-150 V
Drain to Source Resistance90 mΩ
Drain to Source Voltage (Vdss)-150 V
Element ConfigurationSingle
Fall Time150 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.32 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation294 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation294 W
Rds On Max90 mΩ
Resistance90 mΩ
Rise Time350 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time155 ns
Turn-On Delay Time50 ns
Voltage Rating (DC)-150 V
Dimensions
Height23.8 mm
Length15.8 mm
Width5 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Compliance Statements