onsemi FDS6990A

Name: onsemi FDS6990A
Brand: onsemi
SKU: FDS6990A

Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 7.5A, 18mΩ

$ 0.476

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Rochester Electronics		FDS6990A	46					0.574	0.476	0.424	17h
element14 APAC	2	FDS6990A	0	1	Cut Tape	1.022*	0.850*	0.751*	0.564*	0.529*	6h
Farnell	2	FDS6990A	0	5	Cut Tape		1.003*	0.672*	0.478*	0.462*	12h
Win Source		WS-FDS6990A	4,424	27				1.682	1.447	1.447	18h
ICPartonline		FDS6990A	9,280			13.000	12.350	11.700	11.050	10.400	>1wk

Inventory History

3 month trend: +0.00%

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDS6990A.

Upverter

Technical Drawing1 page6 years ago

Newark

element14 APAC

IHS

onsemi

Inventory History

3 month trend:

+0.00%

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1999-02-01

Lifecycle StatusObsolete (Last Updated: 2 days ago)

LTB Date2021-10-08

LTD Date2022-04-08

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)

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Descriptions

Descriptions of onsemi FDS6990A provided by its distributors.

Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 7.5A, 18mΩ

onsemi

Trans MOSFET N-CH 30V 7.5A 8-Pin SOIC T/R / MOSFET 2N-CH 30V 7.5A 8SOIC

Win Source

DUAL N-CHANNEL LOGIC LEVEL POWERTRENCH MOSFET Small Signal Field-Effect Transistor, 7.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:7.5A; On Resistance, Rds(on):0.01ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

Newark

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Fairchild Semiconductor

MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 25°C:7.5A; Current Id Max:7.5A; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:20A; SMD Marking:FDS6990A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V

element14 APAC