onsemi FDS6898AZ

Name: onsemi FDS6898AZ
Brand: onsemi
SKU: FDS6898AZ

Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ

$ 0.589

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Distributor		SKU		Min	Pkg
Avnet		FDS6898AZ	2,500	2500						0.488	5d
Newark		FDS6898AZ	1,203	1	Cut Tape	1.980	1.330	0.954	0.743	0.743
Verical	4	FDS6898AZ	1,127	493					0.633	0.564
Rochester Electronics	2	FDS6898AZ	17,995					0.610	0.506	0.451	20h
DigiKey	3	FDS6898AZCT-ND	4,175	1	Cut Tape	1.910	1.214	0.815	0.589	0.589

Inventory History

3 month trend: -3.77%

CAD Models

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Datasheets & Documents

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Upverter

Technical Drawing1 page6 years ago

IHS

Newark

element14 APAC

onsemi

Inventory History

3 month trend:

-3.77%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-07-26

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDS6898AZ provided by its distributors.

Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ

onsemi

Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R

Avnet Japan

Dual N-Channel 20 V 14 mOhm PowerTrench Mosfet -SOIC-8

Future Electronics

45W 12V 4V@ 250uA 19nC@ 10V 2N 55V 175m¦¸@ 10V,7.2A 12A 350pF@25V SOIC-8 4.9mm*3.9mm*1.75mm

UnikeyIC

20V 9.4A 14m´Î@4.5V9.4A 900mW 1.5V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS

Dasenic

MOSFET, NN; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:9.4A; Current Id Max:9.4A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):14mohm; Package / Case:SO-8; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V

element14 APAC

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Fairchild Semiconductor