onsemi FDP22N50N

Name: onsemi FDP22N50N
Brand: onsemi
SKU: FDP22N50N

N-Channel Power MOSFET, UniFETTM II, 500 V, 22 A, 220 mΩ, TO-220

$ 1.855

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Distributor		SKU		Min	Pkg
Arrow Electronics	2	FDP22N50N	964	1		2.802	2.802	2.419	2.076	2.076
Verical	3	FDP22N50N	56	1		2.739	2.739	2.387	1.904	1.767
Rochester Electronics		FDP22N50N	509					1.810	1.620	1.520	13h
DigiKey		FDP22N50N-ND	1,634	1	Tube	4.950	4.950	2.338	1.806	1.806
Newark		FDP22N50N	0	150					3.160	2.640

Inventory History

3 month trend: -19.30%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDP22N50N.

Upverter

Datasheet9 pages2 years ago

Technical Drawing1 page6 years ago

Master Electronics

IHS

onsemi

Fairchild Semiconductor

Inventory History

3 month trend:

-19.30%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2009-05-03

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDP22N50N provided by its distributors.

N-Channel Power MOSFET, UniFETTM II, 500 V, 22 A, 220 mΩ, TO-220

onsemi

Power MOSFET, N Channel, 500 V, 22 A, 0.185 ohm, TO-220, Through Hole

Avnet

MOSFET, N-CH, 500V, 22A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 22A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.185ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Powe

Farnell

Power Field-Effect Transistor, 22A I(D), 500V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Fairchild Semiconductor