onsemi FDN5618P

Name: onsemi FDN5618P
Brand: onsemi
SKU: FDN5618P

P-Channel PowerTrench® MOSFET, 60V, -1.25A, 170mΩ

$ 0.155

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Distributor		SKU		Min	Pkg
Future Electronics	4	FDN5618P	10,878,000	3K	Tape & Reel					0.215
Avnet	3	FDN5618P	225,000	3K						0.131	5d
Newark	2	FDN5618P	57,670	1	Cut Tape	0.113	0.113	0.113	0.113	0.113
Verical	3	FDN5618P	2,800	13				0.260	0.177	0.115
Arrow Electronics	2	FDN5618P	2,800	1		0.652	0.405	0.260	0.177	0.177

Inventory History

3 month trend: -25.37%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDN5618P.

IHS

Datasheet5 pages25 years ago

Datasheet6 pages3 years ago

Upverter

onsemi

Farnell

Newark

Inventory History

3 month trend:

-25.37%

CAD Models

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Supply Chain

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDN5618P provided by its distributors.

P-Channel PowerTrench® MOSFET, 60V, -1.25A, 170mΩ

onsemi

P-Channel 60 V 0.170 Ohm Logic Level PowerTrench Mosfet SSOT-3

Future Electronics

Power MOSFET, P Channel, 60 V, 1.25 A, 0.17 ohm, SuperSOT, Surface Mount

EBV Elektronik

This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications.

Fairchild Semiconductor

MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:1.2A; On Resistance, Rds(on):0.17ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:SuperSOT-3 ;RoHS Compliant: Yes

Newark

Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -1.25 / Drain-Source Voltage (Vds) V = -60 / ON Resistance (Rds(on)) mOhm = 230 / Gate-Source Voltage V = 20 / Fall Time ns = 8 / Rise Time ns = 16 / Turn-OFF Delay Time ns = 30 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500

Distrelec

MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:1.25A; Drain Source Voltage Vds:60V; On Resistance Rds(on):170mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:20V; Power Dissipation Pd:500mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.2A; Current Temperature:25°C; Device Marking:618; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; Package / Case:SOT-23; Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:10A; SMD Marking:618; Tape Width:8mm; Termination Type:SMD; Voltage Vds:60V; Voltage Vds Typ:-60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-3V

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