onsemi FDMS9600S
$ 1.3
EOL
Inventory History
3 month trend: +1.47%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-06-22
Lifecycle StatusEOL (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
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Descriptions
Descriptions of onsemi FDMS9600S provided by its distributors.
Transistor MOSFET Array Dual N-CH 30V 32A/30A 8-Pin Power 56 T/R
Avnet Japan
Dual N-Channel 30 V 13 mOhm Surface Mount PowerTrench Mosfet - Power 56
MOSFET, DUAL N-CH, 30V, 32A, 2.5W; Available until stocks are exhausted
This device includes two specialized MOSFETs in a unique dual Power 56 package. It is designed to provide an optimal Synchronous Buck power stage in terms of efficiency and PCB utilization. The low switching loss high-side MOSFET is complemented by a low conduction loss low-side SyncFET™.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +1.47%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Contact PlatingGold
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight9 mg
Technical
Continuous Drain Current (ID)16 mA
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance8.5 mΩ
Drain to Source Voltage (Vds)30 V
Element ConfigurationDual
Fall Time32 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.705 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation1 W
Rds On Max8.5 mΩ
Resistance13 MΩ
Rise Time11 ns
Schedule B8541290080
Turn-Off Delay Time54 ns
Dimensions
Height800 µm
Length5 mm
Width6 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Compliance Statements