onsemi FDMS86520L
Mosfet N Ch 60V 13.5A 8PQFN / Trans Mosfet N-ch Si 60V 13.5A 8-PIN Pqfn Ep T/r
$ 0.979
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Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descriptions
Descriptions of onsemi FDMS86520L provided by its distributors.
MOSFET N CH 60V 13.5A 8PQFN / Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R
N-Channel PowerTrench® MOSFET 60V, 22A, 8.2mΩ
FDMS86520L Series 60 V 22 A 8.2 mOhm N-Ch PowerTrench® MOSFET - Power 56
Power Field-Effect Transistor, 13.5A I(D), 60V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
2.5W(Ta)，69W(Tc) 20V 3V@ 250µA 63nC@ 10 V 1individualNChannel 60V 8.2mΩ@ 13.5A,10V 13.5A，22A 4.615nF@30V QFN SMD mount 6mm*5mm*1.1mm
MOSFET, N CH, 60V, 22A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0067ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
Case/PackageTO-220-3
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight74 mg
Technical
Continuous Drain Current (ID)13.5 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance8.2 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time3.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.615 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation69 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max8.2 mΩ
Rise Time5.6 ns
Schedule B8541290080
Threshold Voltage1.8 V
Turn-Off Delay Time32 ns
Turn-On Delay Time15 ns
Dimensions
Height1.1 mm
Length5 mm
Width6 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements