Descriptions of onsemi FDMS86300DC provided by its distributors.
MOSFET, N CH, 80V, 0.0026OHM, 76A, POWER 56-8; Transistor Polarity:N Channel; Co
N-Channel PowerTrench® MOSFET, Dual CoolTM 56, 80V, 110A, 3.1mΩ
Dual N-Channel 80 V 5 mOhm 84 nC 125 W PowerTrench SMT Mosfet - PQFN-8
onsemi N-Ch MOSFET PowerTrench, Vds=80V, 76A, PQFN8, SMD, 8-Pin
Power MOSFET, N Channel, 80 V, 76 A, 0.0026 ohm, Power 56, Surface Mount
N-CHANNEL DUAL 56 POWERTRENCH MOSFET Power Field-Effect Transistor, 24A I(D), 80V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
MOSFET, N CH, 80V, 76A, POWER 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Dissipation Pd:125W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)