onsemi FDMS3622S
$ 0.845
Obsolete
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-12-14
Lifecycle StatusObsolete (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
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Descriptions
Descriptions of onsemi FDMS3622S provided by its distributors.
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET, 25V
25 V ASYMMETRIC DUAL N-CHANNEL POWERTRENCH POWERSTAGE MOSFET Small Signal Field-Effect Transistor, 17.5A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins8
Number of Terminals6
Weight171 mg
Technical
Continuous Drain Current (ID)17.5 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance5 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationDual
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.57 nF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements2
Power Dissipation2.5 W
Rds On Max5 mΩ
Schedule B8541290080
Turn-Off Delay Time23 ns
Turn-On Delay Time7 ns
Dimensions
Height1.05 mm
Length5.1 mm
Width6.1 mm
Compliance
Environmental Classification
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements